1999. 11. 16
1/2
SEMICONDUCTOR
TECHNICAL DATA
TIP122
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
SWITCHING APPLICATIONS.
HAMMER DRIVER, PULSE MOTOR DRIVER
APPLICATIONS.
FEATURES
High DC Current Gain : h
FE
=1000(Min.) at V
CE
=3V, I
C
=3A.
High Collector Breakdown Voltage : V
CEO
=100V(Min.)
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-220AB
10.30 MAX
15.30 MAX
0.80
3.60 0.20
3.00
6.70 MAX
13.60 0.50
5.60 MAX
0.50
1.50 MAX
2.54
4.70 MAX
2.60
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
A
E
M
M
1
2
3
F
B
G
H
L
C
K
J
O
N
P
D
1.37 MAX
1.50 MAX
R
S
Q
C
T
Q
1.50
R
9.50 0.20
S
8.00 0.20
T
2.90 MAX
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
C
B
E
R
8k
120k
R
1
2
=
=
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
100
V
Collector-Emitter Voltage
V
CEO
100
V
Emitter-Base Voltage
V
EB0
5
V
Collector Current
DC
I
C
5
A
Pules
I
CP
8
Base Current
I
B
0.12
A
Collector Power Dissipation
(Tc=25 )
P
C
65
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=100V, I
E
=0
-
-
0.2
mA
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
2
mA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=10mA, I
B
=0
100
-
-
V
DC Current Gain
h
FE
(1)
V
CE
=3V, I
C
=0.5A
1000
-
10000
h
FE
(2)
V
CE
=3V, I
C
=3A
1000
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
(1)
I
C
=3A, I
B
=12mA
-
-
2
V
V
CE(sat)
(2)
I
C
=5A, I
B
=20mA
-
-
4
Base-Emitter Voltage
V
BE
V
CE
=3V, I
C
=3A
-
-
2.5
V
Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
-
300
pF
EQUIVALENT CIRCUIT
1999. 11. 16
2/2
TIP122
Revision No : 1
C
POWER DISSIPATION P (W)
0
SATURATION VOLTAGE
CE(sat)
0.5
3
1
0.3
0.1
COLLECTOR CURRENT I (A)
C
0
AMBIENT TEMPERATURE Ta ( C)
C
P - Ta
V , V - I
h - I
C
COLLECTOR CURRENT I (A)
0.1
0.3
0.5
1
100
FE
DC CURRENT GAIN h
SAFE OPERATING AREA
COLLECTOR-EMITTER VOLTAGE V (V)
COLLECTOR CURRENT I (A)
1
C
3
5
10
CE
CAPACITANCE C ,C
0.1
ob(pF)
10
COLLECTOR-BASE VOLTAGE V (V)
0.3
1
3
CB
vs. REVERSE VOLTAGE
FE
C
3
5
10
300
500
1k
3k
5K
10k
V =3V
CE
CE(sat)
BE(sat)
C
V ,V (V)
BE(sat)
1.0
1.5
2.0
2.5
3.0
3.5
10
20
V
V
BE(sat)
CE(sat)
40
80
120
160
200
20
40
60
80
100
30
50
100
0.01
0.03
0.05
0.1
0.3
0.5
1
3
5
10
10
0
s
50
0
s
1ms
5ms
DC
200
OUTPUT AND INPUT CAPACITANCE
ib(pF)
EMITTER-BASE VOLTAGE V (V)
EB
10
30
100
30
50
100
300
500
1k
f=1MHz
C
ob
ib
C
I /I =250
C
B
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